English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power GaN device applications. The FEG-HEMT demonstrates a combination of ferroelectric polarization and charge trapping process in the ferro-charge-storage gate stack, leading to a positive threshold voltage shift for E-mode operations. In this work, FEG-HEMTs with various Hf-based and Zr-based charge trapping layers are systematically studied. FEG-HEMT which employed nitrogen incorporated HfO<sub>2</sub> (HfON) as the charge trapping layer shows an E-mode operation with the highest <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ th}}$ </tex-math></inline-formula> (&#x002B;2.3 V) after initialization. Moreover, the gate leakage of the HfON sample was further reduced due to the nitrogen incorporation, leading to a more complete charging process during initialization. The <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ th}}$ </tex-math></inline-formula> instability is also addressed and investigated. The FEG-HEMT with HfON as the charge trapping layer showed a negligible <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ th}}$ </tex-math></inline-formula> hysteresis (&#x2212;43mV) and the highest <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ th}}$ </tex-math></inline-formula> stability in both the PBTI (positive bias threshold voltage instability) and NBTI (negative bias threshold voltage instability) test measurements.

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack