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In this article, sub-10 nm top width nanowire In0.53Ga0.47As gate-all-around (GAA) MOSFETs with improved subthreshold characteristics and reliability are demonstrated. These devices exhibit a significant improvement in the subthreshold performances with subthreshold swing (SS) of 70 mV/dec, drain induced barrier lowering (DIBL) of 46 mV/V, and off-current (<inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ off}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$1.6 \times 10^{-4} \mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> for InGaAs GAA MOSFETs. Effective control of short channel effects (SCEs) is confirmed by the error bar of statistical variation analysis. Under gate bias stress, a low degradation of SS and threshold voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ th}}$ </tex-math></inline-formula>) shift has been achieved due to N2 RP treatment of the InGaAs GAA MOSFETs. The superior performance can be attributed to the strong electrostatic control and high quality of high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula>/InGaAs interface, originating from shrinking nanowire width and RP passivation effects. These results show the developed GAA MOSFET devices have good potential for future low-power high-switching speed CMOS logic applications.

Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability