English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Breakdown capability of <inline-formula> <tex-math notation="LaTeX">${\beta }$ </tex-math></inline-formula>-Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With <inline-formula> <tex-math notation="LaTeX">$5~{\mu }\text{m}~{\beta }$ </tex-math></inline-formula>-Ga2O3 drift layer, the ideal breakdown voltage (BV) of the heterojunction was 1.37 kV, while the BV of the reference device without effective mesa edge termination decreased dramatically to 300 V due to the electric field crowding at the device edge. Four mesa ET structures were investigated to mitigate the electric field crowding at the junction edge, including beveled mesa, step mesa, deeply etched mesa, and p-doped guard ring. Without effective ET, the peak electric field at the junction edge was &#x007E;4.2 MV/cm at &#x2212;300 V. By incorporating these ET techniques, the peak electric fields were reduced significantly to 0.73 MV/cm. Ideal BV of 1.37 kV was achievable using deeply etched mesa and guard ring ETs. The beveled mesa realized &#x003E;80&#x0025; of the ideal BV, while step mesa ET was less effective in alleviating the electric field crowding and only offered &#x007E; 40&#x0025; of the ideal BV. The device BV can be further scaled by varying <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 drift layer thickness. This work can serve as an important reference and guideline for developing high power high voltage <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 based bipolar power devices.

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination