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In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the physics of trapping and detrapping of electrons in carbon at nitrogen-site acceptor trap (denoted here as C<sub>N</sub>) and does not require an equivalent Resistance-Capacitance circuit. The model is validated against three off-state stress drain voltages of 50 V, 100 V, and 150 V using only C<sub>N</sub> as trap species.

Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model