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The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power devices due to its thin top barrier, tight carrier confinement, and improved breakdown voltage. This work explores the large-signal RF performance of high-electron-mobility transistors on this heterostructure. Results are highlighted by record high on-current of 3.6 A/mm, and record maximum oscillation frequency (<inline-formula> <tex-math notation="LaTeX">$f_{max}$ </tex-math></inline-formula>) of 233 GHz. The load-pull power sweep at 10 GHz demonstrate a peak power added efficiency (PAE) of 22.7&#x0025; with an associated gain (<inline-formula> <tex-math notation="LaTeX">$G_{T}$ </tex-math></inline-formula>) of 8.7 dB and output power (<inline-formula> <tex-math notation="LaTeX">$P_{out}$ </tex-math></inline-formula>) of 3 W/mm. When optimized for power, the peak <inline-formula> <tex-math notation="LaTeX">$P_{out}$ </tex-math></inline-formula> of 3.3 W/mm has an associated PAE of 14.7&#x0025; and <inline-formula> <tex-math notation="LaTeX">$G_{T}$ </tex-math></inline-formula> of 3.2 dB. This first demonstration is encouraging for the mm-wave power potential of the AlN/GaN/AlN HEMT.

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz