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In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In0.53Ga0.47As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility (<inline-formula> <tex-math notation="LaTeX">${\mu }_{\mathrm{ eff}}$ </tex-math></inline-formula>) characteristics. As a result, the fabricated devices showed the lowest off-leakage current (<inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ off}}$ </tex-math></inline-formula>), subthreshold slope (<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>.<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>.) and high <inline-formula> <tex-math notation="LaTeX">$\mu _{\mathrm{ eff}}$ </tex-math></inline-formula> among reported GaSb p-MOSFETs.

High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb