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For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists of hafnium dioxide (HfO2) and silicon dioxide (SiO2), which has high thermal conductivity, hence SHEs are improved. In order to validate the HGD, technology computer-aided design (TCAD) simulation is performed through Synopsys Sentaurus three-dimensional (3D) tool. As a result, when the HGD is adopted in GAA MOSFETs, SHEs can be significantly improved from 498 K to 415 K. In addition, suppression of gate current, more than 2 orders, is also achieved because of bigger bandgap of SiO2 in HGD. Consequently, this structure takes advantage of higher thermal conductivity and bigger bandgap of SiO2, and higher permittivity of HfO2 for improving SHEs and gate leakage current.

Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs