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Process integration feasibility of UV nanosecond melt laser annealing (MLA) in 14 nm node generation FinFET's contact for dopant surface segregation and activation is assessed by using a 3D TCAD simulation tool. In a n-type source/drain (S/D) in-situ phosphorous doped epilayer, Sb ion implantation is performed, considering the advantage of its surface segregation in lowering of the contact resistivity. The simulation results show that the heat sources created by the laser irradiation are confined mainly in the replacement metal gate (RMG) part, suggesting a potential interest of controlling the polarization of laser light to enlarge the process window by reducing the laser absorption in the RMG part. Also, the estimated solidification front velocity (V) in the MLA-induced epilayer regrowth (~4 m/s) satisfies the requirements (~1 m/s <; V <; ~15 m/s) to enable the surface segregation and metastable activation of the dopants. The surface segregation is also experimentally confirmed in the FinFET contact module.

3D Simulation for Melt Laser Anneal Integration in FinFET’s Contact