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hydrothermal growth of trigonal SiO2 and hexagonal ZnO. We are employing a solution of supercritical ammonia and acidic mineralizer at T = 450-550°C and p = 90-150 MPa to improve the solubility of GaN [2]. The temperature effects of the ammonium halogenides NH4X (X = Cl, Br, I) as mineralizer on the phase stability of GaN synthesized under supercritical ammonothermal conditions is discussed [3]. The tendency to form cubic GaN (c-GaN) increases from X = Cl to I. Decreasing the temperature supports the formation of c-GaN. Single-phase h-GaN can be grown from X = Cl, Br at 550 °C . The solubility of h-GaN is shown in detail. The use of h-GaN substrate has a phase-stabilizing effect and lowers the temperature range for overgrown ammonothermal h-GaN crystal. High-quality nucleation is detrimental to the growth of GaN. Recent results from luminescence on ammonothermal GaN reveal comparable optical quality to high-quality GaN fabricated by currently-standard hydride vapor phase epitaxy (HVPE). The use of GaN fabricated by the acidic ammonothermal growth as substrate material for the successive growth of GaN device structure is shown. References [1] T. Fukuda and D. Ehrentraut, J. Cryst. Growth 2007, 305, 304. [2] Y. Kagamitani, D. Ehrentraut wt al, Jpn. J. Appl. Phys. 2006, 45, 4018. [3] D. Ehrentraut et al, J. Cryst. Growth 2008, 310, 891; D. Ehrentraut et al, J. Mater. Chem. 2007, 17, 886.

Selective synthesis of nano-crystalline TiO2polymorphs from new water-soluble titanium complexes

Selective synthesis of nano-crystalline TiO₂polymorphs from new water-soluble titanium complexes