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We present a study by Scanning Tunneling Microscopy, supported by ab initiocalculations, of the interaction between graphene and monolayer(semiconducting) PtSe$_2$ as a function of the twist angle ${\theta}$ betweenthe two layers. We analyze the PtSe$_2$ contribution to the hybrid interfacestates that develop within the bandgap of the semiconductor to probe theinteraction. The experimental data indicate that the interlayer couplingincreases markedly with the value of ${\theta}$, which is confirmed by abinitio calculations. The moir\'e patterns observed within the gap areconsistent with a momentum conservation rule between hybridized states, and thestrength of the hybridization can be qualitatively described by a perturbativemodel.

Angular dependence of the interlayer coupling at the interface between two dimensional materials 1T-PtSe$_2$ and graphene