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In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spinrotations can be driven by a resonant gate-voltage modulation. Recently, wehave exploited this opportunity in the experimental demonstration of a holespin qubit in a silicon device. Here we investigate the underlying physicalmechanisms by measuring the full angular dependence of the Rabi frequency aswell as the gate-voltage dependence and anisotropy of the hole $g$-factors. Weshow that a $g$-matrix formalism can simultaneously capture and discriminatethe contributions of two mechanisms so far independently discussed in theliterature: one associated with the modulation of the $g$ factors, andmeasurable by Zeeman energy spectroscopy, the other not. Our approach has ageneral validity and can be applied to the analysis of other types ofspin-orbit qubits.

Electrical spin driving by $g$-matrix modulation in spin-orbit qubits