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We compare experimental resistivity data on Ga_{1-x}Mn_xAs films withtheoretical calculations using a scaling theory for strongly disorderedferromagnets. All characteristic features of the temperature dependence of theresistivity can be quantitatively understood through this approach asoriginating from the close vicinity of the metal-insulator transition. Inparticular, we find that the magnetic field induced changes in resistancecannot be explained within a mean-field treatment of the magnetic state, andthat accounting for thermal fluctuations is crucial for a quantitativeanalysis. Similarly, while the non-interacting scaling theory is in reasonableagreement with the data, we find clear evidence in favor of interaction effectsat low temperatures.

Scaling analysis of the magnetoresistance in Ga_{1-x}Mn_xAs