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InxGa1-xN disks in GaN nanowires (DINWs) have emerged as a viable technologyfor on-chip tunable visible spectrum emission without the use of a phosphor.Here we present a study of the optical emission and absorption dynamics inDINWs that incorporates the important role of background disorder states. Weshow that the optical emission in the system is dominated by quantum-confinedexcitons, however the exci-tons are coupled to a large density of backgrounddisorder states. Rapid non-radiative decay (compared to other decay rates suchas spontaneous emission) from disorder states into excitons is observed afteroptical excitation of our sample, which can be advantageous for increasing thebrightness of the system in future design efforts.

Observation of Disorder State Coupling to Excitons in InGaN Disks in GaN Nanowires