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The inversion symmetry breaking at the interface between different materialsgenerates a strong interfacial spin-orbit coupling (ISOC) that may influencethe spin and charge transport in hybrid structures. Here we use a simpleanalytically solvable model to study in the ballistic approximation variousspin transport phenomena induced by ISOC in a bilayer metallic system. In thismodel a non-equilibrium steady state carrying a spin current is created byapplying a spin dependent bias across the metallic junction. Physicalobservables are then calculated using the scattering matrix approach. Inparticular we calculate the absorption of the spin current at the interface(the interface spin-loss) and study the interface spin-to-charge conversion.The latter consists of an in-plane interface charge current generated by thespin dependent bias applied to the junction, which can be viewed as a spingalvanic effect mediated by ISOC. Finally we demonstrate that ISOC leads to aninterfacial spin current swapping, that is, the "primary" spin current flowingthrough the spin-orbit active interface is necessarily accompanied with a"secondary' swapped spin current flowing along the interface and polarized inthe direction perpendicular to that of the "primary" current. Using the exactspin continuity equation we relate the swapping effect to the intefacialspin-loss, and argue that this effect is generic and independent on theballistic approximation used for specific calculations.

Ballistic spin transport in the presence of interfaces with strong spin-orbit coupling