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The nature of a metal--insulator transition tuned by external gates inquantum Hall (QH) systems with point constrictions at integer bulk filling, asreported in recent experiments of Roddaro et al. [1], is addressed. We areparticularly concerned here with the insulating behavior--the phenomena ofbackscattering enhancement induced at high gate voltages. Electrostaticscalculations for QH systems with split gates performed here show thatobservations are not a consequence of interedge interactions near the pointcontact. We attribute the phenomena of backscattering enhancement to asplitting of the integer edge into conducting and insulating stripes, whichenable the occurrence of the more relevant backscattering processes offractionally charged quasiparticles at the point contact. For the values of theparameters used in the experiments we find that the conducting channels arewidely separated by the insulating stripes and that their presence alterssignificantly the low-energy dynamics of the edges. Interchannel impurityscattering does not influence strongly the tunneling exponents as they arefound to be irrelevant processes at low energies. Exponents of backscatteringat the point contact are unaffected by interchannel Coulomb interactions sinceall channels have same chirality of propagation.Comment: 19 pages; To appear in Phys. Rev.

Electrostatics of edge states of quantum Hall systems with constrictions: Metal-insulator transition tuned by external gates