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We present a model in which pit nucleation in thin films is considered toarise from a near-equilibrium nucleation process. In this model the adatomconcentration plays a central role in controlling the morphological developmentof the surface. Although pits relieve elastic energy more efficiently thanislands, pit nucleation can be prevented by a high adatom concentration.Three-dimensional islands act as adatom sinks and the lower adatom density intheir vicinity promotes pit nucleation. Thermodynamic considerations predictseveral different growth regimes in which pits may nucleate at different stagesof growth depending on the growth conditions and materials system. Howeverdirect comparisons to experimental observations require that kinetics be takeninto account as well. The model predicts a wide range of possible morphologies:planar films, islands alone, islands nucleation followed by pit nucleation, andpits alone. The model shows good agreement with experimental observations inIII-V systems given the uncertainties in quantifying experimental parameterssuch as the surface energy.Comment: 33 pages, 8 figures. Changes: clarified some captions, added a  summary of the assumptions made in this wor

Pit nucleation in the presence of three-dimensional islands during heteroepitaxial growth