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Although van der Waals (vdW) layered MoS2 shows the phase transformation fromthe semiconducting 2H-phase to the metallic 1T-phase through chemical lithiumintercalation, vdW MoTe2 is thermodynamically reversible between the 2H- and1T'-phases, and can be further transformed by energetics, laser irradiation,strain or pressure, and electrical doping. Here, thickness- andtemperature-dependent optical properties of 1T'-MoTe2 thin films grown bychemical vapor depsition are investigated via Fourier-transformed infraredspectroscopy. An optical gap of 28 +/- 2 meV in a 3-layer (or 2 nm) thick1T'-MoTe2 is clearly observed at a low temperature region below 50K. Nodiscernible optical bandgap is observed in samples thicker than ~4 nm. Theobserved thickness-dependent bandgap results agree with the measured dcresistivity data; the thickness-dependent 1T'-MoTe2 clearly demonstrates themetal-semiconductor transition at a crossover below the 2 nm-thick sample.

Evidence of shallow bandgap in ultra-thin 1T'-MoTe2 via infrared spectroscopy