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Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond arepromising systems for applications in quantum technology. The NV and SiVcenters have multiple charge states, and their charge states have differentelectronic, optical and spin properties. For the NV centers, mostinvestigations for quantum sensing applications are targeted on the negativelycharged NV (NV$^{-}$), and it is important for the NV centers to be in theNV$^{-}$ state. However, it is known that the NV centers are converted to theneutrally charged state (NV$^{0}$) under laser excitation. An energeticallyfavorable charge state for the NV and SiV centers depends on their localenvironments. It is essential to understand and control the charge statedynamics for their quantum applications. In this work, we discuss the chargestate dynamics of NV and SiV centers under high-voltage nanosecond pulsedischarges. The NV and SiV centers coexist in the diamond crystal. Thehigh-voltage pulses enable manipulating the charge states efficiently. Thesevoltage-induced changes in charge states are probed by their photoluminescencespectral analysis. The analysis result from the present experiment shows thatthe high-voltage nanosecond pulses cause shifts of the chemical potential andcan convert the charge states of NV and SiV centers with the transition ratesof $\sim$ MHz. This result also indicates that the major population of the SiVcenters in the sample is the doubly negatively charged state (SiV$^{2-}$),which is often overlooked because of its non-fluorescent and non-magneticnature. This demonstration paves a path for a method of rapid manipulation ofthe NV and SiV charge states in the future.