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Polycrystalline graphenewas transferred onto differently terminated epitaxial layers of boron-doped diamond deposited onto single crystal substrates. Chemical and electronic characterisationwas performed using energy-filtered photoemission electronmicroscopy and angle-resolved photoemission spectroscopy. Electronic interaction between the diamond and graphenewas observed, where doping of the graphene on the hydrogen and oxygen terminated diamondwas n-doping of 250meV and 0meV respectively.We found that thewidewindowof achievable graphene doping is effectively determined by the diamond surface dipole, easily tuneable with a varying surface functionalisation. A Schottky junction using the graphene-diamond structure was clearly observed and shown to reduce downward band bending of the hydrogen terminated diamond, producing a Schottky barrier height of 330meV.

Graphene-diamond junction photoemission microscopy and electronic interactions