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We investigate the role of pseudospin structure of few-layer black phosphorus(BP) in interband tunneling properties in lateral BP junctions. We find thatinterband tunneling is critically dependent on junction directions because ofthe anisotropic pseudospin structure of BP. When the armchair direction of BPis normal to the interface, pseudospins of incident and transmitted carriersare nearly aligned so that interband tunneling is highly effective, analogousto the Klein tunneling in graphene. However, when the zigzag direction isnormal to the interface, interband tunneling is suppressed by misalignedpseudospins. We also study junctions of band-gap inverted BP where theelectronic structure is characterized by two Dirac cones. In this case,intervalley tunneling is prohibited either by momentum conservation or bypseudospin mismatch while intravalley tunneling is Klein-like irrespective ofthe junction direction. These results provide a foundation for developinghigh-performance devices from BP and other pseudospin materials.

Anisotropic Pseudospin Tunneling in Two-Dimensional Black Phosphorus Junctions