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Hybridisation of electronic bands of two-dimensional materials, assembledinto twistronic heterostructures, enables one to tune their optoelectronicproperties by selecting conditions for resonant interlayer hybridisation.Resonant interlayer hybridisation qualitatively modifies the excitons in suchheterostructures, transforming these optically active modes into superpositionstates of interlayer and intralayer excitons. For MoSe$_2$/WSe$_2$heterostructures, strong hybridization occurs between the holes in thespin-split valence band of WSe$_2$ and in the top valence band of MoSe$_2$,especially when both are bound to the same electron in the lowest conductionband of WSe$_2$. Here we use resonance Raman scattering to provide directevidence for the hybridisation of excitons in twistronic MoSe$_2$/WSe$_2$structures, by observing scattering of specific excitons by phonons in bothWSe$_2$ and MoSe$_2$. We also demonstrate that resonance Raman scatteringspectroscopy opens up a wide range of possibilities for quantifying the layercomposition of the superposition states of the exciton and the interlayerhybridisation parameters in heterostructures of two-dimensional materials.

Superposition of intra- and inter-layer excitons in twistronic MoSe$_2$/WSe$_2$ bilayers probed by resonant Raman scattering