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Local variations in the Seebeck coefficient in low-dimensionalmaterials-based nanostructures and devices play a major role in theirthermoelectric performance. Unfortunately, currently most thermoelectricmeasurements probe the aggregate characteristics of the device as a whole,failing to observe the effects of the local variations and internal structure.Such variations can be caused by local defects, geometry, electrical contactsor interfaces and often substantially influence thermoelectric properties, mostprofoundly in two-dimensional (2D) materials. Here, we use Scanning ThermalGate Microscopy (STGM), a non-invasive method not requiring an electricalcontact between the nanoscale tip and the probed sample, to obtain nanoscaleresolution 2D maps of the thermovoltage in graphene samples. We investigate ajunction formed between single-layer and bilayer graphene and identify theimpact of internal strain and Fermi level pinning by the contacts using adeconvolution method to directly map the local Seebeck coefficient. The newapproach paves the way for an in-depth understanding of thermoelectricbehaviour and phenomena in 2D materials nanostructures and devices.

Direct Mapping of Local Seebeck Coefficient in 2D Material Nanostructures via Scanning Thermal Gate Microscopy