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Due to their unique two-dimensional nature, charge carriers in semiconductingtransition metal dichalcogenides (TMDs) exhibit strong unscreened Coulombinteractions and sensitivity to defects and impurities. The versatility of vander Waals layer stacking allows spatially separating electrons and holesbetween different TMD layers with staggered band structure, yielding interlayerfew-body excitonic complexes whose nature is still debated. Here we combinequantum Monte Carlo calculations with spectrally and temporally resolvedphotoluminescence measurements on a top- and bottom-gated MoSe2/WSe2heterostructure, and identify the emitters as impurity-bound interlayerexcitonic complexes. Using independent electrostatic control of doping andout-of-plane electric field, we demonstrate control of the relative populationsof neutral and charged complexes, their emission energies on a scale largerthan their linewidth, and an increase of their lifetime into the microsecondregime. This work unveils new physics of confined carriers and is key to thedevelopment of novel optoelectronics applications.

Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer