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The scalable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN)is of great interest for its numerous applications in novel electronic devices.Highly-crystalline h-BN films, with single-crystal sizes up to hundreds ofmicrons, are demonstrated via a novel Ni foam assisted technique reported herefor the first time. The nucleation density of h-BN domains can be significantlyreduced due to the high boron solubility, as well as the large specific surfacearea of the Ni foam. The crystalline structure of the h-BN domains is found tobe well aligned with, and therefore strongly dependent upon, the underlying Ptlattice orientation. Growth-time dependent experiments confirm the presence ofa surface mediated self-limiting growth mechanism for monolayer h-BN on the Ptsubstrate. However, utilizing remote catalysis from the Ni foam, bilayer h-BNfilms can be synthesized breaking the self-limiting effect. This work providesfurther understanding of the mechanisms involved in the growth of h-BN andproposes a facile synthesis technique that may be applied to furtherapplications in which control over the crystal alignment, and the numbers oflayers is crucial.

Ni Foam Assisted Synthesis of High Quality Hexagonal Boron Nitride with Large Domain Size and Controllable Thickness