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We investigate the excitonic transitions in single- and few-layer MoSe2phototransistors by photocurrent spectroscopy. The measured spectral profilesshow a well-defined peak at the optically active (bright) A0 exciton resonance.More interestingly, when a gate voltage is applied to the MoSe2 to bring itsFermi level near the bottom of the conduction band, another prominent peakemerges at an energy 30 meV above the A0 exciton. We attribute this second peakto a gate-induced activation of the spin-forbidden dark exciton transition,AD0. Additionally, we evaluate the thickness-dependent optical bandgap of thefabricated MoSe2 crystals by characterizing their absorption edge.

Observation of bright and dark exciton transitions in monolayer MoSe2 by photocurrent spectroscopy