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Crystallographic alignment between two-dimensional crystals in van der Waalsheterostructures brought a number of profound physical phenomena, includingobservation of Hofstadter butterfly and topological currents, and promisingnovel applications, such as resonant tunnelling transistors. Here, by probingthe electronic density of states in graphene using graphene-hexagonal boronnitride tunnelling transistors, we demonstrate a structural transition ofbilayer graphene from incommensurate twisted stacking state into a commensurateAB stacking due to a macroscopic graphene self-rotation. This structuraltransition is accompanied by a topological transition in the reciprocal spaceand by pseudospin texturing. The stacking transition is driven by van der Waalsinteraction energy of the two graphene layers and is thermally activated byunpinning the microscopic chemical adsorbents which are then removed by theself-cleaning of graphene.

Stacking transition in bilayer graphene caused by thermally activated rotation