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Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2),are expected to be promising for next generation device applications. Theexistence of sulfur vacancies formed in MoS2, however, will potentially makedevices unstable and problematic. Random telegraphic signals (RTSs) have oftenbeen studied in small area Si metal-oxide-semiconductor field-effecttransistors (MOSFETs) to identify the carrier capture and emission processes atdefects. In this paper, we have systemically analyzed RTSs observed inatomically thin layer MoS2 FETs. Several types of RTSs have been analyzed. Oneis the simple on/off type of telegraphic signals, the second is multileveltelegraphic signals with a superposition of the simple signals, and the thirdis multilevel telegraphic signals that are correlated with each other. The lastone is discussed from the viewpoint of the defect-defect interaction in MoS2FETs with a weak screening in atomically confined two-dimensional electron-gassystems. Furthermore, the position of defects causing RTSs has also beeninvestigated by preparing MoS2 FETs with multi-probes. The electron beam waslocally irradiated to intentionally generate defects in the MoS2 channel. It isclearly demonstrated that the MoS2 channel is one of the RTS origins. RTSanalysis enables us to analyze the defect dynamics of TMD devices.

Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics