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We calculate the dispersion of the plasmon-LO modes taking into account thespatial dispersion of the electronic polarizability. It is shown thatstimulated emission of the plasmon-LO mode is possible in the frequency rangecorresponding to the Reststrahlen band of GaAs both in a 6 nm wide HgTe/CdTe QWand in a 5 nm wide HgTe/Cd0.7Hg0.3Te QW grown on the (013) plane. Due to theanisotropy of the dispersion law for the plasmon-LO mode, the [03-1] directionappears to be optimal for generation.

Stimulated emission of plasmon-LO mode in narrow gap HgTe/CdHgTe quantum wells