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In the present work, we propose using doped Silicon Quantum Dot (SiQD) as asource of coherent surface plasmons (SPASER). The possibility of spasing insingle SiQD is investigated theoretically utilizing full quantum mechanicaltreatment. We show that spasing can take place in doped SiQDs whenever Qualityfactor of a plasmon mode exceeds some minimum value. The minimum value dependson size and doping concentration of SiQDs. It can be used to design an optimumstructure as SPASER in silicon technologies. The condition on Quality factor istranslated to a condition for radius and it is shown that for a given LocalizedSurface Plasmon (LSP) mode, the radius should be less than some critical value.This value only depends on mode index. The required relations for designpurposes are derived and, as an example of feasibility of the approach, aSPASER is designed for mid infrared. Moreover, we propose a more applicabledevice by arranging an array of doped SiQDs on top of a graphene layer.Coupling the Surface Plasmon Polariton (SPP) modes of graphene with LSP modesof SiQDs causes outcoupling of an intense ultra narrow beam of coherent SPPs tobe used in real probable applications.

Doped Silicon Quantum Dots as Sources of Coherent Surface Plasmons