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We describe the drift field in thick depleted silicon sensors as asuperposition of a one-dimensional backdrop field and various three-dimensionalperturbative contributions that are physically motivated. We computetrajectories for the conversions along the field lines toward the channel andinto volumes where conversions are confined by the perturbative fields. Wevalidate this approach by comparing predictions against measured responsedistributions seen in five types of fixed pattern distortion features. Wederive a quantitative connection between "tree ring" flat field distortions toastrometric and shape transfer errors with connections to measurable wavelengthdependence - as ancillary pixel data that may be used in pipeline analysis forcatalog population. Such corrections may be tested on DECam data, wherecorrelations between tree ring flat field distortions and astrometric errors -together with their band dependence - are already under study. Dynamic effects,including the brighter-fatter phenomenon for point sources and the fluxdependence of flat field fixed pattern features are approached usingperturbations similar in form to those giving rise to the fixed patternfeatures. These in turn provide drift coefficient predictions that can bevalidated in a straightforward manner. Once the three parameters of the modelare constrained using available data, the model is readily used to providepredictions for arbitrary photo-distributions with internally consistentwavelength dependence provided for free.

Pixel area variations in sensors: a novel framework for predicting pixel fidelity and distortion in flat field response