English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Surface damage caused by ionizing radiation in SiO$_2$ passivated siliconparticle detectors consists mainly of the accumulation of a positively chargedlayer along with trapped-oxide-charge and interface traps inside the oxide andclose to the Si/SiO$_2$-interface. High density positive interface net chargecan be detrimental to the operation of a multi-channel $n$-on-$p$ sensor sincethe inversion layer generated under the Si/SiO$_2$-interface can cause loss ofposition resolution by creating a conduction channel between the electrodes. Inthe investigation of the radiation-induced accumulation of oxide charge andinterface traps, a capacitance-voltage characterization study of n/$\gamma$-and $\gamma$-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed thatclose agreement between measurement and simulation were possible when oxidecharge density was complemented by both acceptor- and donor-type deep interfacetraps with densities comparable to the oxide charges. Corresponding inter-stripresistance simulations of a $n$-on-$p$ sensor with the tuned oxide chargedensity and interface traps show close agreement with experimental results. Thebeneficial impact of radiation-induced accumulation of deep interface traps oninter-electrode isolation may be considered in the optimization of theprocessing parameters of isolation implants on $n$-on-$p$ sensors for theextreme radiation environments.

Modeling of Surface Damage at the Si/SiO$_2$-interface of Irradiated MOS-capacitors