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SiGe BiCMOS technology can be used to produce ultra-fast, low-power siliconpixel sensors that provide state-of-the-art time resolution even without aninternal gain mechanism. The development of such sensors requires theidentification of the main factors that may degrade the timing performance andthe characterisation of the dependance of the sensor time resolution on theamplifier power consumption. Measurements with a $ \mathrm{^{90}Sr} $ source ofa prototype sensor produced in SG13G2 technology from IHP Microelectronics,shows a time resolution of 140 ps at an amplifier current of 7 $ \mathrm{\mu}$A and 45 ps at higher power consumption. A full simulation shows that theresolution on the measurement of the signal time-over-threshold, used tocorrect for time walk, is the main factor affecting the timing performance.

Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology