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High-purity germanium (HPGe) crystals are required to be well-characterizedbefore being fabricated into Ge detectors. The characterization of HPGecrystals is often performed with the Hall Effect system, which measures thecarrier concentration, the Hall mobility, and the electrical resistivity. Thereported values have a strong dependence on the size of the ohmic contacts andthe geometry of the samples used in conducting the Hall Effect measurements. Weconduct a systematic study using four samples cut from the same location in aHPGe crystal made into different sized ohmic contacts or different geometriesto study the variation of the measured parameters from the Hall Effect system.The results are compared to the C-V measurements provided by the Ge detectormade from the same crystal. We report the systematic errors involved with theHall Effect system and find a reliable technique that minimizes the systematicerror to be only a few percent from the Hall Effect measurements.

Characterization of High-Purity Germanium (Ge) Crystals for Developing Novel Ge Detectors