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In this study, after numerical simulation, a novel snapback-free Shorted-Anode Insulated Gate Bipolar Transistor (SA-IGBT) with a Multiple p+/n Collector is proposed and investigated. This structure consists of P+ pillars located on the side of the collector. The P+ pillars provide high carrier injection efficiency and increase the anode resistance during the turn-on transient, eliminate the snapback phenomenon, and above all, they also extract holes during the turn-off process. This results in better performance between E off  and V ce  with the multiple p+/n collector (MPC) SA-IGBT and is advantageous for turn-off loss. When the MPC SA-IGBT and the SA-IGBT have the same forward voltage drop, the MPC structure reduces the turn-off loss by 25%.

Low Turn-Off Loss Shorted-Anode IGBT with Multiple p+/n Collector