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Unusual quantum phenomena usually emerge upon doping Mott insulators. Using acombinatorial molecular beam epitaxy system integrated with cryogenic scanningtunneling microscopy, we investigate the electronic structure of amodulation-doped Mott insulator Sn/Si(111)-($\sqrt{3}\times\sqrt{3}$)-R30$^\textrm{o}$. In underdoped regions, we observe a universalpseudogap opening around the Fermi level, which changes little with the appliedmagnetic field and the occurrence of Sn vacancies. The pseudogap gets smearedout at elevated temperatures and alters in size with the spatial confinement ofthe Mott insulating phase. Our findings, along with the previously observedsuperconductivity at a higher doping level, are highly reminiscent of theelectronic phase diagram in the doped copper oxide compounds.

Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-($\sqrt{3}\times \sqrt{3}$)-R30$^\textrm{o}$