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High throughput experimental methods are known to accelerate the rate ofresearch, development, and deployment of electronic materials. For example,thin films with lateral gradients in composition, thickness, or otherparameters have been used alongside spatially-resolved characterization toassess how various physical factors affect material properties under varyingmeasurement conditions. Similarly, multi-layer electronic devices that containsuch graded thin films as one or more of their layers can also be characterizedspatially in order to optimize the performance. In this work, we apply thesehigh throughput experimental methods to thin film transistors (TFTs),demonstrating combinatorial device fabrication and semi-automatedcharacterization using sputtered Indium-Gallium-Zinc-Oxide (IGZO) TFTs as acase study. We show that both extrinsic and intrinsic types of device gradientscan be generated in a TFT library, such as channel thickness and length,channel cation compositions, and oxygen atmosphere during deposition. We alsopresent a semi-automated method to measure the 44 devices fabricated on a50x50mm substrate that can help to identify properly functioning TFTs in thelibrary and finish the measurement in a short time. Finally, we propose a fullyautomated characterization system for similar TFT libraries, which can becoupled with high throughput data analysis. These results demonstrate that highthroughput methods can accelerate the investigation of TFTs and otherelectronic devices.

High-throughput fabrication and semi-automated characterization of oxide thin film transistors