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We present a novel ion trap fabrication method enabling the realization ofmultilayer ion traps scalable to an in principle arbitrary number ofmetal-dielectric levels. We benchmark our method by fabricating a multilayerion trap with integrated three-dimensional microwave circuitry. We demonstrateion trapping and microwave control of the hyperfine states of a laser cooled$\,^{9}$Be$^{+}$ ion held at a distance of 35$\,\mu$m above the trap surface.This method can be used to implement large-scale ion trap arrays for scalablequantum information processing and quantum simulation.

Multilayer ion trap technology for scalable quantum computing and quantum simulation