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We study the electron spin relaxation in both symmetric and asymmetricGaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an externalmagnetic field B applied along the QW normal. The spin polarization is inducedby circularly polarized light and detected by time-resolved Kerr rotationtechnique. In the asymmetric structure, where a {\delta}-doped layer on oneside of the QW produces the Rashba contribution to the conduction-bandspin-orbit splitting, the lifetime of electron spins aligned along the growthaxis exhibits an anomalous dependence on B in the range 0<B<0.5 T; this resultsfrom the interplay between the Dresselhaus and Rashba effective fields whichare perpendicular to each other. For larger magnetic fields, the spin lifetimeincreases, which is the consequence of the cyclotron motion of the electronsand is also observed in (001)-grown quantum wells. The experimental results arein agreement with the calculation of the spin lifetimes in (110)- grownasymmetric quantum wells described by the point group Cs where the growthdirection is not the principal axis of the spin-relaxation-rate tensor.

Magnetic Field Effect on Electron Spin Dynamics in (110) GaAs Quantum wells