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We demonstrate and characterize first superconducting nanowire single-photondetectors (SNSPDs) made from atomic layer-deposited (ALD) NbN layers. To assessthe suitability of these films as a detector material, transport properties ofbare films and bridges of different dimensions and thicknesses areinvestigated. Similar ratios of the measured critical current to the depairingcurrent are obtained for micro-bridges made from ALD and sputtered NbN films.Furthermore, we characterized the single-photon response for 5 and 10 nm-thicknanowire detectors. A 100 nm-wide straight nanowire with a length of 5 $\mu$mexhibits saturated count-rate dependencies on bias current and a cut-offwavelength in the near-infrared range. The ALD technique could open up thepossibility to fabricate NbN-based detectors on the wafer scale and toconformally cover also non-planar surfaces for novel device concepts.

Nanowire single-photon detectors made of atomic layer-deposited niobium nitride