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Pulsed laser deposition, a non-equilibrium thin-film growth technique, wasused to stabilize metastable tetragonal iron sulfide (FeS), the bulk state ofwhich is known as a superconductor with a critical temperature of 4 K.Comprehensive experiments revealed four important factors to stabilizetetragonal FeS epitaxial thin films: (i) an optimum growth temperature of 300{\deg}C followed by thermal quenching, (ii) an optimum growth rate of ~7nm/min, (iii) use of a high-purity bulk target, and (iv) use of asingle-crystal substrate with small in-plane lattice mismatch (CaF2).Electrical resistivity measurements indicated that none of all the filmsexhibited superconductivity. Although an electric double-layer transistorstructure was fabricated using the tetragonal FeS epitaxial film as a channellayer to achieve high-density carrier doping, no phase transition was observed.Possible reasons for the lack of superconductivity include lattice strain,off-stoichiometry of the film, electrochemical etching by the ionic liquidunder gate bias, and surface degradation during device fabrication.

Stabilization and heteroepitaxial growth of metastable tetragonal FeS thin films by pulsed laser deposition