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In this paper, we study the impact of using III-nitride semiconductors (GaN,AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiNdeposited by reactive magnetron sputtering. The resulting NbTiN layers are(111)-oriented, fully relaxed, and they keep an epitaxial relation with thesubstrate. The higher critical superconducting temperature (Tc = 11.8 K) wasobtained on AlN-on-sapphire, which was the substrate with smaller latticemismatch with NbTiN. We attribute this improvement to a reduction of the NbTiNroughness, which appears associated to the relaxation of the lattice misfitwith the substrate. On AlN-on-sapphire, superconducting nanowire single photondetectors (SNSPDs) were fabricated and tested, obtaining external quantumefficiencies that are in excellent agreement with theoretical calculations.

Improvement of the critical temperature of NbTiN films on III-nitride substrates