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Theoretical and experimental studies of intrinsic Josephson junctions thatnaturally occur in high-Tc superconducting Bi2Sr2CaCu2O8+{\delta} (Bi-2212)have demonstrated their potential for novel types of compact devices for thegeneration and sensing of electromagnetic radiation in the THz range. Here, weshow that the THz-on-a-chip concept may be realized in liquid phaseepitaxial-grown (LPE) thick Bi-2212 films. We have grown {\mu}m-thick Bi-2212LPE films on MgO substrates. These films display excellent c-axis alignment andsingle crystal grains of about 650x150 {\mu}m2 in size. A branchedcurrent-voltage characteristic was clearly observed in c-axis transport, whichis a clear signature of underdamped intrinsic Josephson junctions, and aprerequisite for THz-generation. We discuss LPE growth conditions allowingimprovement of the structural quality and superconducting properties of Bi-2212films for THz applications.

Thick Bi2Sr2CaCu2O8+{\delta} films grown by liquid-phase epitaxy for Josephson THz applications