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Ultrananocrystalline diamond/hydrogenated amorphous carbon composite thinfilms synthesized via coaxial arc plasma possess a marked structural feature ofdiamond grains embedded in an amorphous carbon and a hydrogenated amorphouscarbon matrix which are the largest constituents of the films. Since theamorphous nature yields much larger light absorption coefficients as well as ageneration source of photo-induced carriers with UV rays, these films can bepotential candidates for deep-UV photodetector applications. From some previousstudies p-type conduction of the films has been realized by doping boron inexperimental conditions. In addition, their optical and electricalcharacteristics were investigated previously. However, the bonding structureswhich largely affect the physical properties of the devices have not beeninvestigated. In this work, near-edge X-ray absorption fine structurespectroscopy characterizations are carried out. The result reveals that abonding state {\sigma}* C-B of diamond surfaces is formed preferentially andstructural distortion is caused at an early stage of boron-doping. Furtherdoping into the films lessens the amount of unsaturated bonds such as {\pi}*C=-C, which may be a cause of the device performance degradations. Our worksuggests a fundamental case model of boron-doping effects on a local structureof the film.

semiconductor science and technology

Boron-Doping Effects on Local Structures of Semiconducting  Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Thin  Films Fabricated via Coaxial Arc Plasma: an X-ray Absorption Spectroscopic  Study