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III-V heterostructure based high electron mobility transistors (HEMTs) offersuperior performance as compared to CMOS silicon transistors owing to the highmobility in the 2D electron gas (2DEG) channel at the heterostructureinterface. Gallium nitride (GaN) based HEMTs are also suitable for high powerand high temperature applications. GaN has a rich offering of materialproperties spanning domains of nonlinear optics, piezoelectricmicro-electro-mechanical systems (MEMS), and monolithic microwave integratedcircuits (MMICs). In this paper, we propose HEMT inspired III-V electro-opticmodulator topologies that could potentially outperform silicon photonicmodulators. We analyze the electroabsorption and electrorefraction on accountof the 2DEG interaction with light and present a design framework toselectively leverage the desired mechanism of modulation. Our analysis suggeststhat modulation index of electrorefractive modulation in a HEMT-like structureis comparable to silicon photonic modulators, albeit with much higher electronmobility and thereby much higher modulation rates.

Design and analysis of high electron mobility transistor (HEMT) inspired III-V electro-optic modulator topologies