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The method of software analysis of high-resolution TEM images using the peakpairs algorithm in combination with Raman spectroscopy was employed to studylattice deformations in Ge/Si(001) structures with low-temperature Ge quantumdots. It was found that the stresses do not spread in a thick Si layer abovequantum dots, but completely relax via the formation of a thin boundary layerof mixed composition. However, intermixing of Ge and Si is absent beneath theGe layer in samples with a Ge coverage of 10 \r{A}. Besides intermixing was notobserved at all, both beneath and above the Ge layer, in samples with a Gecoverage of 6 \r{A} or less. This may be due to the predominance of Gediffusion into the Si matrix from the {105} facets of Ge huts, not from the Gewetting layer, at low temperatures of the Ge/Si structure deposition. Thecritical thickness of Si coverage at which the intense stress-induced diffusiontakes place is determined to lie in the range from 5 to 8 nm.

semiconductor science and technology

The formation of intermediate layers in covered Ge/Si heterostructures  with low-temperature quantum dots: a study using high-resolution transmission  electron microscopy and Raman spectroscopy