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The ability to tailor the bandgap of III–V compound semiconductors spatially, across the wafer is highly desirable for monolithically integrating photonic components with multi-functions. Using rapid thermal annealing with SiO2 and TiO2 capping layers as a selective area intermixing technique, we have demonstrated selective area bandgap tuning of III–V quantum dot (QD) material on a silicon (Si) substrate. Electrically pumped InAs/GaAs QD lasers directly grown on Si with dual-wavelength lasing emissions of 1275 and 1313 nm have been fabricated by this technique. This result indicates that the selective area intermixing technique can potentially be used in optical integrated circuits for Si photonics.

Selective area intermixing of III–V quantum-dot lasers grown on silicon with two wavelength lasing emissions