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Ion-assisted surface processes are the basis of modern plasma processing. Ionenergy distribution (IED) control is critical for precise materialmodification, especially in atomic-level technologies such as atomic layeretching. Since this control should be done in real time, it requires real-timefeedback using fast process sensors. In the general case of an industrialplasma reactor, when direct IED measurement is not possible, the IED can beestimated using the concept of a virtual IED sensor. In this paper, a similarvirtual IED sensor is considered using an asymmetric dual-frequency (df) rf CCPdischarge as an example. It is based on a fast calculation method of the IED atan rf-biased electrode. This approach uses the experimentally measured sheathvoltage waveform and plasma density (or ion flux) as input data, and alsoincludes Monte-Carlo simulation of ion motion in the sheath to take intoaccount the effect of ion-neutral collisions. To validate this approach,experiments were carried out using various plasma diagnostics in several gases:argon and xenon as examples of plasma with atomic ions and nitrogen as anexample of plasma with molecular ions. It is shown that in all cases it ispossible to obtain an adequate IED estimation, close to the experimental one,in a reasonably short time (~ tens of seconds when using a modern PC). Theresults obtained demonstrate the possibility of using a virtual IED sensor inreal plasma processing.

Virtual IED sensor for df rf CCP discharges