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Nanostructured surfaces are known to provide excellent optical properties forvarious photonics devices. Fabrication of such nanoscale structures togermanium (Ge) surfaces by metal assisted chemical etching (MACE) is, however,challenging as Ge surface is highly reactive resulting often in micron-levelrather than nanoscale structures. Here we show that by properly controlling theprocess, it is possible to confine the chemical reaction only to the vicinityof the metal nanoparticles and obtain nanostructures also in Ge. Furthermore,it is shown that controlling the density of the nanoparticles, concentration ofoxidizing and dissolving agents as well as the etching time plays a crucialrole in successful nanostructure formation. We also discuss the impact of highmobility of charge carriers on the chemical reactions taking place on Gesurfaces. As a result we propose a simple one-step MACE process that results innanoscale structures with less than 10% surface reflectance in the wavelengthregion between 400 nm and 1600 nm. The method consumes only a small amount ofGe and is thus industrially viable and also applicable to thin Ge layers.

Efficient photon capture on germanium surfaces using industrially feasible nanostructure formation