English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-xresistive memory devices fabricated with CMOS-compatible processes andmaterials. The I-V characteristics exhibit a negative differential resistance(NDR) effect due to a Joule-heating-induced metal-insulator transition of theTi4O7 conductive filament. Carrier transport analysis of all multilevelswitching I-V curves show that while the insulating regime follows the spacecharge limited current (SCLC) model for all resistance states, the conductionin the metallic regime is dominated by SCLC and trap-assisted tunneling (TAT)for low- and high-resistance states respectively. A non-monotonic conductanceevolution is observed in the insulating regime, as opposed to the continuousand gradual conductance increase and decrease obtained in the metallic regimeduring the multilevel SET and RESET operations. Cryogenic transport analysiscoupled to an analytical model accounting for themetal-insulator-transition-induced NDR effects and the resistance states of thedevice provide new insights on the conductive filament evolution dynamics andresistive switching mechanisms. Our findings suggest that the non-monotonicconductance evolution in the insulating regime is due to the combined effectsof longitudinal and radial variations of the Ti4O7 conductive filament duringthe switching. This behavior results from the interplay between temperature-and field-dependent geometrical and physical characteristics of the filament.

Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories