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Although semiconductor to metal phase transformation of MoTe$_{2}$ byhigh-density laser irradiation of more than 0.3 MW/cm$^{2}$ has been reported,we reveal that the laser-induced-metal (LIM) phase is not the 1T' structurederived by a polymorphic-structural phase transition but consists instead ofsemi-metallic Te induced by photo-thermal decomposition of MoTe$_{2}$. Thetechnique is used to fabricate a field effect transistor with aPd/2H-MoTe$_{2}$/LIM structure having an asymmetric metallic contact, and itscontact properties are studied via scanning gate microscopy. We confirm that aSchottky barrier (a diffusion potential) is always formed at thePd/2H-MoTe$_{2}$ boundary and obstacles a carrier transport while an Ohmiccontact is realized at the 2H-MoTe$_{2}$/LIM phase junction for both n- andp-type carriers.

Investigation of laser-induced-metal phase of $\mathrm{MoTe}_{2}$ and its contact property via scanning gate microscopy